BUK7575-100A_15 datasheet(6/13 Pages) PHILIPS

Part #	BUK7575-100A

Description	N-channel TrenchMOS standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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6 / 13 page

BUK7575-100A_2

Product data sheet

Rev. 02 — 30 July 2009

6 of 13

NXP Semiconductors

BUK7575-100A

N-channel TrenchMOS standard level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =0.25mA; VGS =0V; Tj =25°C

100

-

V

ID =0.25mA; VGS =0V; Tj =-55 °C

89

-

V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS = VGS; Tj = 175 °C;

see Figure 11

1-

-

V

ID =1mA; VDS = VGS; Tj =-55 °C;

see Figure 11

--4.4

V

ID =1mA; VDS = VGS; Tj =25°C;

see Figure 11

234

V

IDSS

drain leakage current

VDS =100 V; VGS =0V; Tj = 175 °C

-

500

µA

VDS =100 V; VGS =0V; Tj = 25 °C

-

0.05

10

µA

IGSS

gate leakage current

VDS =0V; VGS =20V; Tj = 25 °C

-

2

100

nA

VDS =0V; VGS =-20 V; Tj = 25 °C

-

2

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =13A; Tj = 175 °C;

see Figure 12 and 13

--187

m

Ω

VGS =10V; ID =13A; Tj =25°C;

see Figure 12 and 13

-64

75

m

Ω

Dynamic characteristics

Ciss

input capacitance

VGS =0V; VDS =25V; f=1MHz;

Tj =25°C; see Figure 15

-

907

1210

pF

Coss

output capacitance

-

127

150

pF

Crss

reverse transfer

capacitance

-

78

110

pF

td(on)

turn-on delay time

VDS =30V; RL =2.2 Ω; VGS =10V;

RG(ext) =5.6 Ω; Tj =25°C

-8

-

ns

tr

rise time

-

39

-

ns

td(off)

turn-off delay time

-

26

-

ns

tf

fall time

-

24

-

ns

LD

internal drain

inductance

from drain lead 6 mm from package to

centre of die; Tj =25°C

-4.5

-

nH

from contact screw on mounting base to

centre of die; Tj =25°C

-3.5

-

nH

LS

internal source

inductance

from source lead to source bond pad;

Tj =25°C

-7.5

-

nH

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0V; Tj =25°C;

see Figure 14

-

0.85

1.2

V

trr

reverse recovery time

IS =13A; dIS/dt = -100 A/µs; VGS =-10 V;

VDS =30V; Tj =25°C

-64

-

ns

Qr

recovered charge

-

120

-

nC

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