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STD888L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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STD888L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R209-028.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE=0) VCBO -60 V Collector-Emitter Voltage (IB=0) VCEO -30 V Emitter-Base Voltage (IC=0) VEBO -6 V Collector Current IC -5 A Collector Peak Current (tp<5ms) ICM -10 A Total Dissipation at TC=25°C PD 15 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TCASE=25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IE=0, IC=-100µA -60 V Collector-Emitter Breakdown Voltage BVCEO (Note 1) IB=0, IC=-10mA -30 V Emitter-Base Breakdown Voltage BVEBO IC=0, IE=-100µA -6 V Collector Cut-off Current ICBO VCB=-30V, IE=0 -10 nA Emitter Cut-off Current IEBO IC=0, VEB=-6V -10 nA Collector-Emitter Saturation Voltage VCE(sat) (Note 1) IC=-500mA, IB=-5mA -0.15 V IC=-2A, IB=-50mA -0.25 V IC=-5A, IB=-250mA -0.70 V IC=-6A, IB=-250mA -0.70 V IC=-8A, IB=-400mA -1 V IC=-10A, IB=-500mA -1.5 V Base-Emitter Saturation Voltage VBE(sat) (Note 1) IC=-2A, IB=-50mA -1.1 V IC=-6A, IB=-250mA -1.4 V DC Current Gain hFE (Note 1) IC=-10mA, VCE=-1V 150 200 IC=-500mA, VCE=-1V 150 200 300 IC=-5A, VCE=-1V 75 100 IC=-8A, VCE=-1V 40 55 IC=-10A, VCE=-1V 15 35 Delay Time tD IC=-3A, IB1=-IB2=-60mA VCC=-20V 180 220 ns Rise Time tR 160 210 ns Storage Time tS 250 300 ns Fall Time tF 80 100 ns Note: 1. Pulsed: Pulse duration=300µs, duty cycle≤1.5% |
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