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BUK7528-55A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7528-55A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 3 of 13 NXP Semiconductors BUK7528-55A N-channel TrenchMOS standard level FET VGS ≥ 5 V Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature Tmb = 25 °C; IDM is single pulse ID = 75 A Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Fig 4. Normalised drain-source non-repetitive avalanche energy as a function of mounting-base temperature 40 60 20 80 100 Pder (%) 0 Tmb (°C) 0 200 150 50 100 003aaf455 40 60 20 80 100 ID (%) 0 Tmb (°C) 0 200 150 50 100 003aaf456 VDS (V) 1103 102 10 003aaf457 102 10 103 ID (A) 1 D.C. 10 ms 100 ms 1 ms 100 μs tp = 10 μs RDS(on) = VDS / ID 40 60 20 80 100 WDSS (%) 0 Tmb (°C) 20 180 140 60 100 003aaf470 |
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Similar Description - BUK7528-55A_15 |
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