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SKY77771 Datasheet(PDF) 1 Page - Skyworks Solutions Inc.

Part # SKY77771
Description  Power Amplifier Module for LTE Band 11/21
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Manufacturer  SKYWORKS [Skyworks Solutions Inc.]
Direct Link  http://www.skyworksinc.com
Logo SKYWORKS - Skyworks Solutions Inc.

SKY77771 Datasheet(HTML) 1 Page - Skyworks Solutions Inc.

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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
203082B • Skyworks Proprietary Information. • Products and product information are subject to change without notice. • January 14, 2014
1
PRODUCT SUMMARY
SKY77771 Power Amplifier Module for LTE
Band 11/21 (1427.9 MHz–1462.9 MHz)
Applications
• LTE Bands 11/21
Features
• Average Power Tracking
(APT) support
• Low voltage positive bias
supply 3.0 V to 4.5 V
• Good linearity
• High efficiency Bands 11/21
• Large dynamic range
• Small, low profile package
- 2.0 x 2.5 mm x 0.9 mm
- 10-pad configuration
• InGaP GaAs HBT
• Supports low collector
voltage operation
• No VREF required
• MIPI RFFE control interface
Description
The SKY77771 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module
developed for Long Term Evolution (LTE) applications. This small and efficient module packs full
1427.9–1462.9 MHz bandwidth coverage into a single compact package. Because of high efficiencies
attained throughout the entire power range, the SKY77771 delivers unsurpassed talk-time
advantages. The SKY77771 meets the stringent spectral linearity requirements of Long Term
Evolution (LTE) data transmission with high power-added efficiency.
The Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all amplifier
active circuitry, including input and interstage matching circuits. The silicon CMOS support die,
providing precision biasing for the MMIC affords, a true MIPI RFFE control interface. Output match into
a 50-ohm load is realized off-chip within the module package to optimize efficiency and power
performance.
The SKY77771 is manufactured with Skyworks' InGaP GaAs Heterojunction Bipolar Transistor (HBT)
process which provides for all positive voltage DC supply operation and maintains high efficiency and
good linearity. While primary bias to the SKY77771 can be supplied directly from any suitable battery
with an output of 3.0 V to 4.5 V, optimal performance is obtained with VCC1 and VCC2 sourced from a
DC-DC power supply adjusted within 0.5 V to 3.4 V based on target output power levels. No external
supply side switch is needed as typical "off" leakage is a few microamperes with full primary voltage
supplied from the battery.


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