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BUK9620-100B Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK9620-100B Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page BUK9620-100B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 6 May 2009 8 of 12 NXP Semiconductors BUK9620-100B N-channel TrenchMOS logic level FET Fig 13. Source current as a function of source drain voltage; typical values. Fig 14. Gate charge waveform definitions Fig 15. Gate-source voltage as a function of turn-on gate charge; typical values. Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003a a c778 0 30 60 90 120 00.5 11.5 2 VSD (V) IS (A) Tj = 25 °C 150 °C 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 003a a c777 0 1 2 3 4 5 0 204060 QG (nC) VGS (V) Tj = 25 °C VDS = 80V VDS = 14V 003a a c775 10 2 10 3 10 4 10 -1 1 10 10 2 VDS (V) C (pF) Cis s Crs s Cos s |
Similar Part No. - BUK9620-100B_15 |
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Similar Description - BUK9620-100B_15 |
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