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BUK9607-30B Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK9607-30B Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page BUK9607-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 31 January 2011 4 of 14 NXP Semiconductors BUK9607-30B N-channel TrenchMOS logic level FET VGS ≥ 5 V Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 03nn21 0 30 60 90 120 0 50 100 150 200 Tmb ( °C) ID (A) Capped at 75 A due to package Tmb (°C) 0 200 150 50 100 03na19 40 80 120 Pder (%) 0 03nn19 VDS (V) 10−1 102 10 1 102 10 103 ID (A) 1 DC 100 ms 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 μs 100 μs Capped at 75 A due to package |
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Similar Description - BUK9607-30B_15 |
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