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BUK9606-55B Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK9606-55B Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page BUK9606-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 23 July 2009 4 of 13 NXP Semiconductors BUK9606-55B N-channel TrenchMOS FET Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 03nh83 1 10 10 2 10 3 10 -1 1 10 10 2 VDS (V) ID (A) DC 100 ms 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 μs 100 μs Capped at 75 A due to package |
Similar Part No. - BUK9606-55B_15 |
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Similar Description - BUK9606-55B_15 |
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