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BUK9606-40B Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9606-40B Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page BUK9606-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 1 February 2011 7 of 14 NXP Semiconductors BUK9606-40B N-channel TrenchMOS logic level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values 03nm18 0 100 200 300 02 46 8 10 VDS (V) ID (A) 10 7 6 5 4.8 Label is VGS (V) 3 2.8 2.6 4.6 4.4 4.2 4 3.8 3.6 3.4 3.2 03nm17 4 6 8 10 12 3 7 11 15 VGS (V) RDSon (m Ω) 03ng53 VGS (V) 03 2 1 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max 03nm15 0 35 70 105 140 020 40 60 ID (A) gfs (S) |
Similar Part No. - BUK9606-40B_15 |
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Similar Description - BUK9606-40B_15 |
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