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93C66AEP Datasheet(PDF) 1 Page - Microchip Technology |
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93C66AEP Datasheet(HTML) 1 Page - Microchip Technology |
1 / 12 page © 1998 Microchip Technology Inc. Preliminary DS21207B-page 1 M 93C66A/B FEATURES • Single supply 5.0V operation • Low power CMOS technology - 1 mA active current (typical) -1 µA standby current (maximum) • 512x 8 bit organization (93C66A) • 256x 16 bit organization (93C66B) • Self-timed ERASE and WRITE cycles (including auto-erase) • Automatic ERAL before WRAL • Power on/off data protection circuitry • Industry standard 3-wire serial interface • Device status signal during ERASE/WRITE cycles • Sequential READ function • 100,000 E/W cycles guaranteed • Data retention > 200 years • 8-pin PDIP and SOIC packages • Available for the following temperature ranges: DESCRIPTION The Microchip Technology Inc. 93C66A/B is a 4K-bit, low-voltage serial Electrically Erasable PROM. The device memory is configured as 512 x 8 bits (93C66A) or 256 x 16 bits (93C66B). Advanced CMOS technology makes this device ideal for low-power, nonvolatile memory applications. The 93C66A/B is available in standard 8-pin DIP and surface mount SOIC packages. This device is only recommended for 5V automotive temperature applications. For all commercial and industrial temperature applica- tions, the 93LC66A/B is recommended. PACKAGE TYPE BLOCK DIAGRAM - Automotive (E): -40 °C to +125°C CS CLK DI DO 1 2 3 4 8 7 6 5 VCC NC NC VSS CS CLK DI DO VCC NC NC VSS SOIC 1 2 3 4 PDIP 8 7 6 5 VCC VSS DI CS CLK DO MEMORY ARRAY ADDRESS DECODER ADDRESS COUNTER DATA REGISTER OUTPUT BUFFER MEMORY DECODE LOGIC CLOCK GENERATOR 4K 5.0V Automotive Temperature Microwire® Serial EEPROM Microwire is a registered trademark of National Semiconductor. |
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