© 1998 Microchip Technology Inc.

Preliminary

DS21207B-page 1

M

93C66A/B

FEATURES

• Single supply 5.0V operation

• Low power CMOS technology

- 1 mA active current (typical)

-1

µA standby current (maximum)

• 512x 8 bit organization (93C66A)

• 256x 16 bit organization (93C66B)

• Self-timed ERASE and WRITE cycles (including

auto-erase)

• Automatic ERAL before WRAL

• Power on/off data protection circuitry

• Industry standard 3-wire serial interface

• Device status signal during ERASE/WRITE

cycles

• Sequential READ function

• 100,000 E/W cycles guaranteed

• Data retention > 200 years

• 8-pin PDIP and SOIC packages

• Available for the following temperature ranges:

DESCRIPTION

The Microchip Technology Inc. 93C66A/B is a 4K-bit,

low-voltage serial Electrically Erasable PROM. The

device memory is configured as 512 x 8 bits (93C66A)

or 256 x 16 bits (93C66B). Advanced CMOS

technology makes this device ideal for low-power,

nonvolatile memory applications. The 93C66A/B is

available in standard 8-pin DIP and surface mount

SOIC packages. This device is only recommended

for 5V automotive temperature applications. For all

commercial and industrial temperature applica-

tions, the 93LC66A/B is recommended.

PACKAGE TYPE

BLOCK DIAGRAM

- Automotive (E):

-40

°C to +125°C

CS

CLK

DI

DO

1

2

3

4

8

7

6

5

NC

NC

CS

CLK

DI

DO

NC

NC

SOIC

1

2

3

4

PDIP

8

7

6

5

DI

CS

CLK

DO

MEMORY

ARRAY

ADDRESS

DECODER

ADDRESS

COUNTER

DATA

REGISTER

OUTPUT

BUFFER

MEMORY

DECODE

LOGIC

CLOCK

GENERATOR

Microwire is a registered trademark of National Semiconductor.