BUK98180-100A_15 datasheet(1/13 Pages) PHILIPS

Part #	BUK98180-100A

Description	N-channel TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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BUK98180-100A

N-channel TrenchMOS logic level FET

Rev. 03 — 3 June 2010

Product data sheet

1.

Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

 Q101 compliant

 Suitable for logic level gate drive

sources

1.3 Applications

 12 V, 24 V and 42 V loads

 Automotive and general purpose

power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source

voltage

Tj ≥ 25 °C; Tj ≤ 150 °C

-

100

V

ID

drain current

VGS =5V; Tsp =25°C;

see Figure 1; see Figure 3

--4.6

A

Ptot

total power

dissipation

Tsp =25°C; see Figure 2

--8

W

Static characteristics

RDSon

drain-source

on-state

resistance

VGS =10V; ID =5A; Tj =25°C

-

147

173

m

Ω

VGS =4.5 V; ID =5A;

Tj =25°C

--201

m

Ω

VGS =5V; ID =5A; Tj =25°C;

see Figure 12; see Figure 13

-153

180

m

Ω

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =4A; Vsup ≤ 100 V;

RGS =50 Ω; VGS =5V;

Tj(init) = 25 °C; unclamped

--16

mJ

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