TF212

JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-097.C



PARAMETER

SYMBOL

RATING

UNIT

Gate Drain Voltage

-20

V

Gate Current

10

mA

Drain Current

1

mA

Power Dissipation

100

mW

Junction Temperature

150

°С

Storage Temperature

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Gate Drain Breakdown Voltage

-20

V

Gate Source Cut off Voltage

-0.2

-0.6

-1.2

V

Drain Current

140

350

μA

Forward Transfer Admittance

lYFSl

1

1.2

mS

Input Capacitance

3.5

pF

Output Capacitance

0.65

pF

Voltage Gain

-3

dB

Reduced Voltage Characteristic

△

-1.2

-3.5

dB

Frequency Characteristic

△

f=1KHz to 110Hz

-1

dB

Input Resistance

f=1KHz

25

MΩ

Output Resistance

f=1KHz

700

Ω

Total Harmonic distortion

THD

1

%

Output Noise Voltage

-110

dB



RANK

F4

F5

RANGE

140-240

210-350