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ISL8393IBZ Datasheet(PDF) 9 Page - Intersil Corporation |
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ISL8393IBZ Datasheet(HTML) 9 Page - Intersil Corporation |
9 / 12 page 9 specification tables and Typical Performance Curves for details. V+ and GND power the internal logic (thus setting the digital switching point) and level shifters. The level shifters convert the logic levels to switched V+ and V- signals to drive the analog switch gate terminals, so switch parameters - especially RON - are strong functions of both supplies. Logic-Level Thresholds V+ and GND power the internal logic stages, so V- has no affect on logic thresholds. This switch family is TTL compatible (0.8V and 2.4V) over a V+ supply range of 2.5V to 10V. At 12V the VIH level is about 2.7V, so for best results use a logic family that provides a VOH greater than 3V. The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving the digital input signals from GND to V+ with a fast transition time minimizes power dissipation. High-Frequency Performance In 5 0Ω systems, signal response is reasonably flat even past 200MHz (see Figure 15), with a small signal -3dB bandwidth in excess of 300MHz, and a large signal bandwidth exceeding 300MHz. An off switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from a switch’s input to its output. OFF Isolation is the resistance to this feedthrough, while Crosstalk indicates the amount of feedthrough from one switch to another. Figure 16 details the high OFF Isolation and Crosstalk rejection provided by this family. At 10MHz, OFF isolation is about 50dB in 5 0Ω systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease OFF Isolation and Crosstalk rejection due to the voltage divider action of the switch OFF impedance and the load impedance. Leakage Considerations Reverse ESD protection diodes are internally connected between each analog-signal pin and both V+ and V-. One of these diodes conducts if any analog signal exceeds V+ or V-. Virtually all the analog leakage current comes from the ESD diodes to V+ or V-. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or V- and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and V- pins constitutes the analog-signal- path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog signal paths and GND. Typical Performance Curves TA = 25oC, Unless Otherwise Specified FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE V+ (V) VCOM = (V+) - 1V ICOM = 1mA 46 8 10 12 0 12.5 25 37.5 50 62.5 3 579 11 V- = -5V -40oC 85oC V- = 0V 25oC 10 15 20 25 25oC -40oC 85oC 15 20 25 30 35 20 30 40 50 60 30 40 50 60 70 80 VCOM (V) 02 4 13 5 V+ = 2.7V V+ = 5V 25oC -40oC 85oC ICOM = 1mA V- = 0V V- = 0V V+ = 3.3V 25oC -40oC 85oC V- = 0V 25oC 85oC -40oC 20 ISL8391, ISL8392, ISL8393 |
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