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BSD223P Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSD223P Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page 201 4-07-29 Rev.1. 6 Page 6 BSD 223P 9 Drain-source on-resistance RDS(on) = f(Tj) parameter: ID = -0.39 A, VGS = -4.5 V -60 -20 20 60 100 °C 160 Tj 0 0.2 0.4 0.6 0.8 1 1.2 Ω 1.6 typ. 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 160 Tj 0 0.2 0.4 0.6 0.8 1 1.2 V 1.6 2% typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz 0 2 4 6 8 10 12 V 15 -VDS 1 10 2 10 pF Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD -2 -10 -1 -10 0 -10 1 -10 A BSD 223P T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
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