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PESD3V3U1UL Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESD3V3U1UL Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page PESD3V3U1UA_UB_UL_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 30 October 2008 4 of 12 NXP Semiconductors PESD3V3U1UA/UB/UL Ultra low capacitance unidirectional ESD protection diodes 6. Characteristics Table 9. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage - - 3.3 V IRM reverse leakage current VRWM = 3 V - 1 100 nA VBR breakdown voltage IR = 5 mA 4.5 5.6 6.8 V Cd diode capacitance f = 1 MHz; VR = 0 V - 2.6 3.1 pF rdif differential resistance IR = 5 mA - - 100 Ω f = 1 MHz; Tamb =25 °C Fig 2. Diode capacitance as a function of reverse voltage; typical values Fig 3. V-I characteristics for a unidirectional ESD protection diode VR (V) 05 4 23 1 006aab356 2.4 2.3 2.5 2.6 Cd (pF) 2.2 006aaa407 −VCL −VBR −VRWM −IRM −IR −IPP V I P-N − + |
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