PESD3V3S4UF_PESD5V0S4UF_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 17 January 2008

2 of 13

NXP Semiconductors

PESD3V3S4UF; PESD5V0S4UF

Unidirectional quadruple ESD protection diode arrays

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Symbol

1

cathode (diode 1)

2

common anode

3

cathode (diode 2)

4

cathode (diode 3)

5

common anode

6

cathode (diode 4)

bottom view

3

2

1

4

5

6

006aaa156

6

1

5

2

4

3

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PESD3V3S4UF

XSON6

plastic extremely thin small outline package;

no leads; 6 terminals; body 1

× 1.45 × 0.5 mm

SOT886

PESD5V0S4UF

Table 4.

Marking codes

Type number

Marking code[1]

PESD3V3S4UF

A3

PESD5V0S4UF

A4

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

peak pulse power

[1][2] -

110

W

peak pulse current

[1][2] -10

A