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6N10G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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6N10G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 6N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-486.E ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 100 V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V 1 µA VDS=100V, VGS=0V, TJ=125°C 50 µA VDS=100V, VGS=0V, TJ=150°C 250 µA Gate- Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA On-State Drain Current (Note 2) ID(on) VDS=5V, VGS=10V 8.0 A ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.0 3.0 V Static Drain-Source On-State Resistance (Note 2) RDS(ON) VGS=10V, ID=3A 0.150 0.200 Ω VGS=10V, ID=3A, TJ=125°C 0.350 VGS=10V, ID=3A, TJ=150°C 0.450 VGS=4.5V, ID=1.0A 0.160 0.225 Forward Transconductance (Note 2) gFS VDS=15V, ID=3A 8.5 S DYNAMIC PARAMETERS (Note1) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 320 pF Output Capacitance COSS 80 pF Reverse Transfer Capacitance CRSS 17 pF SWITCHING PARAMETERS Turn-ON Delay Time (Note3) tD(ON) VDD=30V, RL=7.5Ω, ID=0.5A, VGEN=10V, RG=25 Ω 28 58 ns Rise Time (Note 3) tR 30 60 ns Turn-OFF Delay Time (Note 3) tD(OFF) 148 178 ns Fall-Time (Note 3) tF 52 82 ns Total Gate Charge (Note 3) QG VDS=50V, VGS=10V, ID=1.3A IG=100µA 27 75 nC Gate to Source Charge (Note 3) QGS 2.4 nC Gate to Drain Charge (Note 3) QGD 6.8 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) Maximum Pulsed Drain-Source Diode Forward Current ISM 8.0 A Drain-Source Diode Forward Voltage (Note 2) VSD IF=6.5A, VGS=0V 0.9 1.3 V Reverse Recovery Time tRR IF=6.5A, di/dt=100A/µs 35 60 ns Notes: 1. Guaranteed by design, not subject to production testing. 2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%. 3. Independent of operating temperature. |
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