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70N06 Datasheet(PDF) 3 Page - Unisonic Technologies |
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70N06 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 9 page 70N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 9 www.unisonic.com.tw QW-R502-089.D ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TC = 25°C ID 70 A TC = 100°C 56 A Drain Current Pulsed (Note 2) IDM 280 A Avalanche Energy Single Pulsed (Note 3) EAS 600 mJ Repetitive (Note 2) EAR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns Power Dissipation TO-220/TO-262/TO-263 PD 104 W TO-220F 36 W TO-220F2 38 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.24mH, IAS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C 4. ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Case TO-220/TO-262 TO-263 θJC 1.2 °C/W TO-220F 3.47 °C/W TO-220F2 3.28 °C/W |
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Similar Description - 70N06_15 |
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