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70N06L-TF2-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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70N06L-TF2-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 9 page  70N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 9 www.unisonic.com.tw QW-R502-089.D ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 1 μA Gate-Source Leakage Current Forward IGSS VGS = 20V, VDS = 0 V 100 nA Reverse VGS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/△TJ ID = 1mA, Referenced to 25°C 0.08 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 35 A 15 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS = 0 V, VDS = 25 V f = 1MHz 1800 2000 pF Output Capacitance COSS 800 900 pF Reverse Transfer Capacitance CRSS 130 150 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, VGS=10V,ID =1 A (Note 1, 2) 90 120 ns Turn-On Rise Time tR 350 400 ns Turn-Off Delay Time tD(OFF) 260 300 ns Turn-Off Fall Time tF 260 300 ns Total Gate Charge QG VDS = 60V, VGS = 10 V, ID = 48A (Note 1, 2) 210 250 nC Gate-Source Charge QGS 50 nC Gate-Drain Charge (Miller Charge) QGD 120 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 70A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 70 A Maximum Pulsed Drain-Source Diode Forward Current ISM 280 Reverse Recovery Time tRR VGS = 0 V, IS = 70A dIF / dt = 100 A/μs 90 ns Reverse Recovery Charge QRR 300 μC Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature |
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