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19N10L-TQ2-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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19N10L-TQ2-R Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 8 page UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-261.J 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) < 0.1Ω @ VGS=10V, ID=7.8A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL |
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