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TEA1795T Datasheet(PDF) 8 Page - NXP Semiconductors |
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TEA1795T Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page TEA1795T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 4 November 2010 8 of 14 NXP Semiconductors TEA1795T GreenChip synchronous rectifier controller 11. Application information A switched mode power supply with the TEA1795T consists of a primary side half bridge, a transformer, a resonant capacitor and an output stage. In the output stage SR MOSFETs are used to obtain low conduction loss rectification. These SR MOSFETs are controlled by the TEA1795T. The timing for the synchronous rectifier switch is derived from the voltage difference between the corresponding drain sense and source sense pins. The resistor in the drain sense connection is needed to protect the TEA1795T against excessive voltages. These resistors should typically be 1 k Ω. Higher values might impair correct timing, lower values may not provide sufficient protection. Special attention should be paid to the connection of the drain sense and source sense pins. The voltages measured on these pins are used for the timing of the gate driver output. Wrong measurement results in wrong timing. The connections to these pins should not interfere with the power wiring. The power wiring conducts currents with high dI/dt values. This can easily cause measurement errors resulting from induced voltages due to parasitic inductances. The separate source sense pins make it possible to sense the source voltage of the external MOSFETs directly, without having to use the current carrying power ground tracks for this. 11.1 Application diagram resonant application Fig 5. Typical resonant application with TEA1795T 001aal799 DSA GDA SSA DSB VCC GDB SSB GND Qprim1 CHB RDRNSENSE1 Qprim2 Qsec1 PRIMARY SIDE CONTROLLER TEA1795T Vin Vout TR IC1 RDRNSENSE2 Qsec2 Cout 1 k Ω 1 k Ω |
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