IKZ50N65NH5 datasheet(5/16 Pages) INFINEON

Part #	IKZ50N65NH5

Description	650V DuoPack IGBT and diode High speed series fifth generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKZ50N65NH5

Highspeedseriesfifthgeneration

Rev.2.1,2014-10-31

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V,IC=0.20mA

650

-

V

Collector-emitter saturation voltage

VCEsat

VGE=15.0V,IC=50.0A

Tvj=25°C

Tvj=100°C

Tvj=150°C

-

1.65

1.82

1.90

2.10

-

V

Diode forward voltage

VF

VGE=0V,IF=50.0A

Tvj=25°C

Tvj=100°C

Tvj=150°C

-

1.60

1.65

2.20

-

V

Gate-emitter threshold voltage

VGE(th)

IC=0.50mA,VCE=VGE

3.2

4.0

4.8

V

Zero gate voltage collector current

ICES

VCE=650V,VGE=0V

Tvj=25°C

Tvj=175°C

-

2500.0

50.0

-

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

-

100

nA

Transconductance

gfs

VCE=20V,IC=50.0A

-

65.0

-

S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

DynamicCharacteristic

Input capacitance

Cies

-

3100

-

Output capacitance

Coes

-

90

-

Reverse transfer capacitance

Cres

-

11

-

VCE=25V,VGE=0V,f=1MHz

pF

Gate charge

QG

VCC=520V,IC=50.0A,

VGE=15V

-

109.0

-

nC

Internal emitter inductance

1)

measured 5mm (0.197 in.) from

case

LE

-

13.0

-

nH

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atTvj=25°C

Turn-on delay time

td(on)

-

22

-

ns

Rise time

tr

-

8

-

ns

Turn-off delay time

td(off)

-

252

-

ns

Fall time

tf

-

23

-

ns

Turn-on energy

Eon

-

0.35

-

mJ

Turn-off energy

Eoff

-

0.20

-

mJ

Total switching energy

Ets

-

0.55

-

mJ

Tvj=25°C,

VCC=400V,IC=25.0A,

VGE=0.0/15.0V,

RG(on)=15.0

Ω,RG(off)=20.0Ω,

L

σ=30nH,Cσ=25pF

L

σ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.

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