TLE42994GMV33 datasheet(9/33 Pages) INFINEON | Extreme Low Current Consumption In ON State

Part No.	TLE42994GMV33

Description	Extreme Low Current Consumption In ON State

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Manufacturer	INFINEON [Infineon Technologies AG]

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TLE42994V33

General Product Characteristics

Data Sheet

9

Rev. 1.1, 2014-07-03

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Notes

1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not

designed for continuous repetitive operation.

Table 1

Absolute Maximum Ratings1)

-40 °C ≤

T

j ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise

specified)

1) not subject to production test, specified by design

Parameter

Symbol

Values

Unit

Note / Test Condition Number

Min.

Typ.

Max.

Input I, Enable Input EN, Sense Input SI

Voltage

V

I, VEN, VSI

-40

–

45

V

–

P_4.1.1

Output Q, Reset Output RO, Sense Output SO

Voltage

V

Q, VRO, VSO -0.3

–

7

V

–

P_4.1.2

Reset Delay D, Reset Threshold RADJ

Voltage

V

D, VRADJ

-0.3

–

7

V

–

P_4.1.3

Temperature

Junction Temperature

T

j

-40

–

150

°C

–

P_4.1.4

Storage Temperature

T

stg

-50

–

150

°C

–

P_4.1.5

ESD Absorption

V

ESD,HBM

-2

–

2

kV

Human Body Model

(HBM)2)

2) ESD susceptibility Human Body Model “HBM” according to AEC-Q100-002 - JESD22-A114

P_4.1.6

ESD Absorption

V

ESD,CDM

-500

–

500

V

Charge Device Model

(CDM)3)

3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1

P_4.1.7

ESD Absorption

V

ESD,CDM

-750

–

750

V

Charge Device Model

(CDM)3) at corner pins

P_4.1.8

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