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BTB10LL-8-B-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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BTB10LL-8-B-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BTB10 Preliminary TRIACS UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R401-042.c ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT RMS On-State Current (Full Sine Wave) TC=95°C IT(RMS) 10 A Non Repetitive Surge Peak On-State Current (Full Cycle TJ initial=25°C) F=50Hz t=20ms ITSM 100 A F=60Hz t=16.7ms 105 A I 2t Value for Fusing tP=10ms I 2t 55 A 2s Critical Rate of Rise of On-State Current: IG=2xIGT, tr≤100ns F=120Hz TJ=125°C dI/dt 50 A/µs Non Repetitive Surge Peak Off-State Voltage tP=10ms TJ=25°C VDSM/VRSM VDSM/VRSM+100 V Peak Gate Current tP=20µs TJ=125°C IGM 4 A Average Gate Power Dissipation TJ=125°C PG(AV) 1 W Operating Junction Temperature TJ -40~+125 °C Storage Junction Temperature TSTG -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 60 °C/W Junction to Case (AC) θJC 1.5 °C/W ELECTRICAL CHARACTERISTICS (TJ= 25°C, unless otherwise specified) FOR STANDARD (4 QUADRANTS) PARAMETER SYMBOL TEST CONDITIONS C B UNIT MIN TYP MAX MIN TYP MAX Gate Trigger Current (Note 1) IGT VD=12V, RL=33Ω I-II-III 25 50 mA IV 50 100 mA Gate Trigger Voltage VGT ALL 1.3 1.3 V Gate Non-Trigger Voltage VGD VD=VDRM, RL=3.3kΩ, TJ=125°C ALL 0.2 0.2 V Holding Current (Note 2) IH IT=500mA 25 50 mA Latching Current IL IG=1.2IGT I-III-IV 40 50 mA II 80 100 mA Critical Rate of Rise of Off-State Voltage (Note 2) dV/dt VD=67%VDRM, Gate Open, TJ=125°C 200 400 V/µs Critical Rate of Rise of Off-State Voltage at Commutation (Note 2) (dV/dt)c (dI/dt)c=4.4A/ms, TJ= 125°C 5 10 V/µs STATIC CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Peak On-State Voltage (Note 2) VT ITM=14A, tP=380μsTJ=25°C 1.55 V Threshold Voltage (Note 2) VTO TJ=125°C 0.85 V Dynamic Resistance (Note 2) RD TJ=125°C 40 mΩ Repetitive Peak Off-State Current IDRM VDRM=VRRM TJ=25°C 5 μA IRRM TJ=125°C 1 mA Notes: 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of MT2 referenced to MT1. |
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