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SI1034CX Datasheet(PDF) 5 Page - Vishay Telefunken |
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SI1034CX Datasheet(HTML) 5 Page - Vishay Telefunken |
5 / 8 page Document Number: 67468 S13-1614-Rev. C, 29-Jul-13 www.vishay.com 5 Vishay Siliconix Si1034CX This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67468. Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T C = 25 °C Single Pulse 10 ms 100 μs 1 s 10 s, DC BVDSS Limited Power Derating, Junction-to-Ambient 0 0.06 0.12 0.18 0.24 0 255075 100 125 150 T A - Ambient Temperature (°C) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse |
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