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SI3585CDV Datasheet(PDF) 10 Page - Vishay Telefunken |
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SI3585CDV Datasheet(HTML) 10 Page - Vishay Telefunken |
10 / 16 page Vishay Siliconix Si3585CDV www.vishay.com 10 Document Number: 67470 S13-1562-Rev. C, 15-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Case 0 0.4 0.8 1.2 1.6 025 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 0 255075 100 125 150 T A - Ambient Temperature (°C) |
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