SIZ710DT datasheet(3/14 Pages) TFUNK

Part #	SIZ710DT

Description	N-Channel 20 V (D-S) MOSFETs

Download	14 Pages

Scroll/Zoom	100%

Manufacturer	TFUNK [Vishay Telefunken]

Direct Link	http://www.vishay.com

Logo

3 / 14 page

Document Number: 65733

S11-2379-Rev. B, 28-Nov-11

www.vishay.com

3

Vishay Siliconix

SiZ710DT

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

 300 µs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Dynamica

Turn-On Delay Time

td(on)

Channel-1

VDD = 10 V, RL = 1 

ID  10 A, VGEN = 4.5 V, Rg = 1 

Channel-2

VDD = 10 V, RL = 1 

ID  10 A, VGEN = 4.5 V, Rg = 1 

Ch-1

15

30

ns

Ch-2

25

50

Rise Time

tr

Ch-1

15

30

Ch-2

15

30

Turn-Off Delay Time

td(off)

Ch-1

20

40

Ch-2

30

60

Fall Time

tf

Ch-1

12

25

Ch-2

12

25

Turn-On Delay Time

td(on)

Channel-1

VDD = 10 V, RL = 1 

ID  10 A, VGEN = 10 V, Rg = 1 

Channel-2

VDD = 10 V, RL = 1 

ID  10 A, VGEN = 10 V, Rg = 1 

Ch-1

10

20

Ch-2

15

30

Rise Time

tr

Ch-1

12

25

Ch-2

8

15

Turn-Off Delay Time

td(off)

Ch-1

20

40

Ch-2

30

60

Fall Time

tf

Ch-1

10

20

Ch-2

10

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

Ch-1

16

A

Ch-2

35

Pulse Diode Forward Currenta

ISM

Ch-1

70

Ch-2

100

Body Diode Voltage

VSD

IS = 10 A, VGS = 0 V

Ch-1

0.8

1.2

V

IS = 10 A, VGS = 0 V

Ch-2

0.78

1.2

Body Diode Reverse Recovery Time

trr

Channel-1

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

Channel-2

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

Ch-1

15

30

ns

Ch-2

25

50

Body Diode Reverse Recovery Charge

Qrr

Ch-1

5.5

11

nC

Ch-2

17

35

Reverse Recovery Fall Time

ta

Ch-1

6

ns

Ch-2

14

Reverse Recovery Rise Time

tb

Ch-1

9

Ch-2

11

Similar Part No. - SIZ710DT

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SIZ710DT	175Kb / 14P	N-Channel 20 V (D-S) MOSFETs Rev. A, 04-Oct-10
	SIZ710DT	192Kb / 14P	N-Channel 20 V (D-S) MOSFETs Rev. B, 28-Nov-11
	SIZ710DT	195Kb / 14P	N-Channel 20 V (D-S) MOSFETs 01-Jan-2022
	SIZ710DT-T1-GE3	175Kb / 14P	N-Channel 20 V (D-S) MOSFETs Rev. A, 04-Oct-10
	SIZ710DT	192Kb / 14P	N-Channel 20 V (D-S) MOSFETs Rev. B, 28-Nov-11

More results

Similar Description - SIZ710DT

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	TN0200T	66Kb / 4P	N-Channel 20-V (D-S) MOSFETs Rev. F, 23-Feb-04
	SIZ720DT	193Kb / 14P	N-Channel 20-V (D-S) MOSFETs 01-Jan-2022
	SIZ710DT	175Kb / 14P	N-Channel 20 V (D-S) MOSFETs Rev. A, 04-Oct-10
	SIZ710DT	192Kb / 14P	N-Channel 20 V (D-S) MOSFETs Rev. B, 28-Nov-11
	SIZ700DT	213Kb / 14P	N-Channel 20-V (D-S) MOSFETs 08-Feb-17
	SIUD402ED	223Kb / 9P	N-Channel 20 V (D-S) MOSFETs 01-Jan-2022
	TN0200K	97Kb / 5P	N-Channel 20-V (D-S) MOSFETs Rev. B, 18-Jun-07
	SIZ700DT-T1-GE3	208Kb / 14P	N-Channel 20-V (D-S) MOSFETs Rev. B, 28-Nov-11
	SIZ720DT	194Kb / 14P	N-Channel 20-V (D-S) MOSFETs Rev. B, 28-Nov-11
	SIZ710DT	195Kb / 14P	N-Channel 20 V (D-S) MOSFETs 01-Jan-2022

More results

SIZ710DT Datasheet(PDF) 3 Page - Vishay Telefunken

SIZ710DT Datasheet(HTML) 3 Page - Vishay Telefunken

Similar Part No. - SIZ710DT

Similar Description - SIZ710DT

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL