 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
SI4712DY Datasheet(PDF) 2 Page - Vishay Telefunken |
|
||||||||||||||||||||||||||||||
SI4712DY Datasheet(HTML) 2 Page - Vishay Telefunken |
|
|
2 / 10 page  www.vishay.com 2 Document Number: 65170 S09-1814-Rev. A, 14-Sep-09 Vishay Siliconix Si4712DY New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 30 V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID= 1 mA 1.2 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 0.028 0.2 mA VDS = 30 V, VGS = 0 V, TJ = 100 °C 220 On -State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 15 A 0.0105 0.013 Ω VGS = 4.5 V, ID = 10 A 0.013 0.0165 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 37 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 1084 pF Output Capacitance Coss 200 Reverse Transfer Capacitance Crss 77 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 18.5 28 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 8.3 12.5 Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 2.0 Gate Resistance Rg f = 1 MHz 0.3 1.2 2.4 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 16 30 ns Rise Time tr 18 35 Turn-Off Delay Time td(off) 15 30 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 816 Rise Time tr 11 22 Turn-Off Delay Time td(off) 17 34 Fall Time tf 918 Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.5 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 1 A 0.48 0.65 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 17 34 ns Body Diode Reverse Recovery Charge Qrr 714 nC Reverse Recovery Fall Time ta 10 ns Reverse Recovery Rise Time tb 7 |
Similar Part No. - SI4712DY |
|
Similar Description - SI4712DY |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
