IKP06N60T_14 datasheet(3/13 Pages) INFINEON | IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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IKP06N60T Datasheet(PDF) 3 Page - Infineon Technologies AG

Part #	IKP06N60T

Description	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IKP06N60T

TRENCHSTOP

™ Series

p

IFAG IPC TD VLS

3

Rev. 2.5 20.09.2013

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

t d( o n)

T j= 2 5  C ,

V C C = 4 0 0 V , I C = 6 A ,

V G E = 0 / 1 5 V , r G = 2 3  ,

L = 6 0 n H , C  = 4 0 p F

L , C  f r o m F i g . E

Energy losses include

“tail” and diode reverse

recovery.

-

9

-

ns

Rise time

t r

-

6

-

Turn-off delay time

t d( of f)

-

130

-

Fall time

t f

-

58

-

Turn-on energy

Eo n

-

0.09

-

mJ

Turn-off energy

Eo ff

-

0.11

-

Total switching energy

Et s

-

0.2

-

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

T j =2 5 C ,

VR = 4 00 V , IF = 6 A,

d iF/ d t =5 5 0 A/ s

-

123

-

ns

Diode reverse recovery charge

Q rr

-

190

-

nC

Diode peak reverse recovery current

I rr m

-

5.3

-

A

Diode peak rate of fall of reverse

recovery current during t b

d irr /d t

-

450

-

A/

s

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

t d( o n)

T j= 1 7 5  C ,

V C C = 4 0 0 V , I C = 6 A ,

V G E = 0 / 1 5 V , r G = 2 3  ,

L = 6 0 n H , C  = 4 0 p F

L , C  f r o m F i g . E

Energy losses include

“tail” and diode reverse

recovery.

-

9

-

ns

Rise time

t r

-

8

-

Turn-off delay time

t d( of f)

-

165

-

Fall time

t f

-

84

-

Turn-on energy

Eo n

-

0.14

-

mJ

Turn-off energy

Eo ff

-

0.18

-

Total switching energy

Et s

-

0.335

-

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

T j =1 7 5 C

VR = 4 00 V , IF = 6 A,

d iF/ d t =5 5 0 A/ s

-

180

-

ns

Diode reverse recovery charge

Q rr

-

500

-

nC

Diode peak reverse recovery current

I rr m

-

7.6

-

A

Diode peak rate of fall of reverse

recovery current during t b

d irr /d t

-

285

-

A/

s

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