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IKW20N60T Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IKW20N60T Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 13 page IKW20N60T TRENCHSTOP ™ Series IFAG IPC TD VLS 3 Rev. 2.8 18.05.2015 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. Typ. max. IGBT Characteristic Turn-on delay time t d( o n) T j= 2 5 C, V CC = 4 0 0 V, I C = 2 0 A, V GE = 0 / 1 5 V , r G = 1 2 , L = 1 3 1 n H , C = 3 1 pF L , C f r o m F i g . E Energy losses include “tail” and diode reverse recovery. - 18 - ns Rise time t r - 14 - Turn-off delay time t d( of f) - 199 - Fall time t f - 42 - Turn-on energy Eon - 0.31 - mJ Turn-off energy Eo ff - 0.46 - Total switching energy Ets - 0.77 - Anti-Parallel Diode Characteristic Diode reverse recovery time t rr T j =2 5 C, VR = 4 00 V , IF = 20 A, diF/dt =88 0 A/ s - 41 - ns Diode reverse recovery charge Q rr - 0.31 - µC Diode peak reverse recovery current I rr m - 13.3 - A Diode peak rate of fall of reverse recovery current during t b dirr /d t - 711 - A/ s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value Unit min. Typ. max. IGBT Characteristic Turn-on delay time t d( o n) T j= 1 7 5 C, V CC = 4 0 0 V, I C = 2 0 A, V GE = 0 / 1 5 V , r G = 1 2 , L = 1 3 1 n H , C = 3 1 pF L , C f r o m F i g . E Energy losses include “tail” and diode reverse recovery. - 18 - ns Rise time t r - 18 - Turn-off delay time t d( of f) - 223 - Fall time t f - 76 - Turn-on energy Eon - 0.51 - mJ Turn-off energy Eo ff - 0.64 - Total switching energy Ets - 1.15 - Anti-Parallel Diode Characteristic Diode reverse recovery time t rr T j =1 7 5 C VR = 4 00 V , IF = 20 A, diF/dt =8 8 0 A/ s - 176 - ns Diode reverse recovery charge Q rr - 1.46 - µC Diode peak reverse recovery current I rr m - 18.9 - A Diode peak rate of fall of reverse recovery current during t b dirr /d t - 467 - A/ s |
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