SIZ980DT datasheet(9/14 Pages) TFUNK

Part #	SIZ980DT

Description	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Manufacturer	TFUNK [Vishay Telefunken]

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SiZ980DT

www.vishay.com

Vishay Siliconix

S15-0450 Rev. A, 09-Mar-15

9

Document Number: 62976

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

0.1

1

10

100

0.00.2

0.40.6

0.81.0

V

SD - Source-to-Drain Voltage (V)

T

J = 150 °C

T

J = 25 °C

10

-1

10

-2

10

-3

10

-4

10

-5

10

-6

0

255075

100

125

150

T

J -Temperature (°C)

V

DS = 10 V

V

DS = 20, 30 V

0.000

0.002

0.004

0.006

0.008

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 125 °C

T

J = 25 °C

I

D = 19 A

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

Time (s)

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

V

DS -Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

10 s

I

DM Limited

I

DM Limited

100 ms

Limited by R

DS(on)*

1 ms

T

A= 25 °C

BVDSS Limited

10 ms

100 μs

1 s

DC

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