TPS54388-Q1_15 datasheet(5/40 Pages) TI

Part #	TPS54388-Q1

Description	TPS54388-Q1 2.95-V to 6-V Input, 3-A Output, 2-MHz, Synchronous Step-Down SWIFT??Switcher

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TPS54388-Q1

www.ti.com

SLVSAF1D – OCTOBER 2010 – REVISED APRIL 2015

7.4 Thermal Information

TPS54388-Q1

THERMAL METRIC(1)

RTE

UNIT

16 PINS

RθJA

Junction-to-ambient thermal resistance

43.5

°C/W

RθJC(top)

Junction-to-case(top) thermal resistance

46.1

°C/W

RθJB

Junction-to-board thermal resistance

15.5

°C/W

ψJT

Junction-to-top characterization parameter

0.7

°C/W

ψJB

Junction-to-board characterization parameter

15.5

°C/W

RθJC(bot)

Junction-to-case(bottom) thermal resistance

3.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.5

Electrical Characteristics

TJ = –40°C to 150°C, V(VIN) = 2.95 to 6 V (unless otherwise noted)

DESCRIPTION

CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY VOLTAGE (VIN PIN)

VIN UVLO start

2.28

2.5

V

Internal undervoltage lockout threshold

VIN UVLO stop

2.45

2.6

Shutdown supply current

V(EN) = 0 V, 25°C, 2.95 V ≤ V(VIN) ≤ 6 V

5.5

15

μA

Quiescent current, I(q)

V(SENSE) = 0.9 V, V(VIN) = 5 V, 25°C, Rt = 400 kΩ

515

750

μA

ENABLE AND UVLO (EN PIN)

Rising

1.25

Enable threshold

V

Falling

1.18

Enable threshold + 50 mV

–1.6

Input current

μA

Enable threshold – 50 mV

–1.6

VOLTAGE REFERENCE (VSENSE PIN)

Voltage reference

2.95 V

≤ V(VIN) ≤ 6 V, –40°C <TJ < 150°C

0.79

0.8

0.811

V

MOSFET

V(BOOT-PH) = 5 V

12

30

High-side switch resistance

m

Ω

V(BOOT-PH) = 2.95 V

16

30

V(VIN) = 5 V

13

30

Low-side switch resistance

m

Ω

V(VIN) = 2.95 V

17

30

ERROR AMPLIFIER

Input current

2

nA

Error-amplifier transconductance (gm)

–2

μA < I(COMP) < 2 μA, V(COMP) = 1 V

245

μS

Error-amplifier transconductance (gm) during

–2

μA < I(COMP) < 2 μA, V(COMP) = 1 V,

79

μS

slow start

V(VSENSE) = 0.4 V

Error amplifier source and sink

V(COMP) = 1 V, 100-mV overdrive

±20

μA

COMP to high-side FET current gm

25

S

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