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S10604-200CT Datasheet(PDF) 6 Page - Hamamatsu Corporation

Part # S10604-200CT
Description  Photo IC diode
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Manufacturer  HAMAMATSU [Hamamatsu Corporation]
Direct Link  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

S10604-200CT Datasheet(HTML) 6 Page - Hamamatsu Corporation

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Photo IC diode
S10604-200CT
Operating voltage, output characteristics
RL
(external resistor)
IL
Photo IC
diode
Rin=150 Ω ± 20%
(internal protection resistor)
Vcc
KPICC0128EC
[Figure 1] Measurement circuit example
Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure
1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7
V (±10%).
To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage VR
when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)].
VR = Vbe(ON) + IL × Rin ............ (1)
The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is
indicated as load lines in Figure 2.
VR = Vcc - IL × RL ............ (2)
In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum
detectable light level can be specified. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL),
adjust them according to the operating conditions.
Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximately
0.1%/°C.


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