S9066-211SB_15 datasheet(4/9 Pages) HAMAMATSU

Part #	S9066-211SB

Description	Photo IC diodes

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Manufacturer	HAMAMATSU [Hamamatsu Corporation]

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Photo IC diodes

S9066-211SB, S9067-201CT

Photosensitive

surface

10°

5°

10°

5°

0.25

+0.15

-0.1

1.0

2.0

ϕ2.0 (Depth 0.15)

Anode

(Anode)

NC

Cathode

Tolerance unless otherwise

noted: ±0.1, ±2°

Shaded area indicates burr.

Values in parentheses indicate

reference value.

5.2 ± 0.3

(Includig burr)

Center of photosensitive area

Photosensitive area 0.46 × 0.32

(Specified at lead root)

(2 ×) ϕ1.0

(Depth 0.15)

2.5 ± 0.2

5.0

1.27 1.27 1.27

(4 ×) 0.55

(4 ×) 0.45

Photodiode

for signal offset

Cathode

Anode

CL

RL

Vout

Reverse bias

power supply

The drawing surrounded

by the dotted line shows

a schematic diagram of

the photo IC.

Current amp

(Approx. 30000 times)

Photodiode

for signal detection

Internal protection

resistance

(Approx. 150 Ω)

Operating circuit example

KPICC0091EC

The photo IC diode must be reverse-biased

so that a positive potential is applied to the

cathode.

To eliminate high-frequency components, we

recommend placing a load capacitance CL in

parallel with load resistance RL as a low-pass

ﬁlter.

KPICA0050EE

Dimensional outlines (unit: mm)

S9066-211SB

Cutoff frequency (fc)

2

πCLRL

1

≈

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S9066-211SB Datasheet(PDF) 4 Page - Hamamatsu Corporation

S9066-211SB Datasheet(HTML) 4 Page - Hamamatsu Corporation

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