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IKB15N60T Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # IKB15N60T
Description  IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKB15N60T Datasheet(HTML) 3 Page - Infineon Technologies AG

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IKB15N60T
TRENCHSTOP
™ Series
q
IFAG IPC TD VLS
3
Rev. 2.8 11.05.2015
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
t d( o n)
T j= 2 5  C,
V CC = 4 0 0 V, I C = 1 5 A,
V GE = 0 / 1 5 V , r G = 1 5  ,
L = 1 5 4 n H , C = 3 9 pF
L , C f r o m F i g . E
Energy losses include
“tail” and diode reverse
recovery.
-
17
-
ns
Rise time
t r
-
11
-
Turn-off delay time
t d( of f)
-
188
-
Fall time
t f
-
50
-
Turn-on energy
Eon
-
0.22
-
mJ
Turn-off energy
Eo ff
-
0.35
-
Total switching energy
Ets
-
0.57
-
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
T j =2 5 C,
VR = 4 00 V , IF = 15 A,
diF/dt =8 25 A/ s
-
34
-
ns
Diode reverse recovery charge
Q rr
-
0.24
-
µC
Diode peak reverse recovery current
I rr m
-
10.4
-
A
Diode peak rate of fall of reverse
recovery current during t b
dirr /d t
-
718
-
A/
s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
t d( o n)
T j= 1 7 5  C,
V CC = 4 0 0 V, I C = 1 5 A,
V GE = 0 / 1 5 V , r G = 15  ,
L = 1 5 4 n H , C = 3 9 pF
L , C f r o m F i g . E
Energy losses include
“tail” and diode reverse
recovery.
-
17
-
ns
Rise time
t r
-
15
-
Turn-off delay time
t d( of f)
-
212
-
Fall time
t f
-
79
-
Turn-on energy
Eon
-
0.34
-
mJ
Turn-off energy
Eo ff
-
0.47
-
Total switching energy
Ets
-
0.81
-
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
T j =1 7 5 C
VR = 4 00 V , IF = 15 A,
diF/dt =8 25 A/ s
-
140
-
ns
Diode reverse recovery charge
Q rr
-
1.0
-
µC
Diode peak reverse recovery current
I rr m
-
14.7
-
A
Diode peak rate of fall of reverse
recovery current during t b
dirr /d t
-
495
-
A/
s


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