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IKD04N60R Datasheet(PDF) 5 Page - Infineon Technologies AG |
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IKD04N60R Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 16 page 5 IKD04N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=4.0A Tvj=25°C Tvj=175°C - - 1.65 1.85 2.10 - V Diode forward voltage VF VGE=0V,IF=4.0A Tvj=25°C Tvj=175°C - - 1.70 1.70 2.10 - V Gate-emitter threshold voltage VGE(th) IC=0.07mA,VCE=VGE 4.3 5.0 5.7 V Zero gate voltage collector current 1) ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - - - 40.0 1000.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=4.0A - 2.2 - S Integrated gate resistor rG none Ω ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 305 - Output capacitance Coes - 18 - Reverse transfer capacitance Cres - 9 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=480V,IC=4.0A, VGE=15V - 27.0 - nC Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s IC(SC) VGE=15.0V,VCC ≤400V, tSC ≤5µs Tvj=25°C - 31 - A SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 14 - ns Rise time tr - 8 - ns Turn-off delay time td(off) - 146 - ns Fall time tf - 171 - ns Turn-on energy Eon - 0.09 - mJ Turn-off energy Eoff - 0.15 - mJ Total switching energy Ets - 0.24 - mJ Tvj=25°C, VCC=400V,IC=4.0A, VGE=0.0/15.0V, rG=43.0 Ω,Lσ=60nH, C σ=40pF L σ,CσfromFig.E 1) Not subject to production test - verified by design/characterization |
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