IKW50N65H5 datasheet(4/17 Pages) INFINEON

Part #	IKW50N65H5

Description	High speed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKW50N65H5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-06

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

650

V

DCcollectorcurrent,limitedbyTvjmax

TC=25°Cvaluelimitedbybondwire

TC=100°C

IC

80.0

56.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax

ICpuls

150.0

A

TurnoffsafeoperatingareaVCE

≤650V,Tvj≤175°C

-

150.0

A

Diodeforwardcurrent,limitedbyTvjmax

TC=25°Cvaluelimitedbybondwire

TC=100°C

IF

40.0

27.0

A

Diodepulsedcurrent,tplimitedbyTvjmax

IFpuls

150.0

A

Gate-emitter voltage

TransientGate-emittervoltage(tp

≤10µs,D<0.010)

VGE

±20

±30

V

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Ptot

305.0

152.5

W

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

260

°C

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,

junction - case

Rth(j-c)

0.50

K/W

Diode thermal resistance,

junction - case

Rth(j-c)

1.50

K/W

Thermal resistance

junction - ambient

Rth(j-a)

40

K/W

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IKW50N65H5 Datasheet(PDF) 4 Page - Infineon Technologies AG

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