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TPS56221 Datasheet(PDF) 6 Page - Texas Instruments |
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TPS56221 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 32 page TPS56221 SLUSAH5C – MARCH 2011 – REVISED JANUARY 2015 www.ti.com Electrical Characteristics (continued) –40°C ≤ TJ ≤ 125°C, VVDD = 12 V, all parameters at zero power dissipation (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT GBWP (1) Gain bandwidth product 10 24 MHz AOL (1) Open loop gain 60 dB Input bias current (current out of IIB VFB = 0.6 V 75 nA FB pin) IEAOP Output source current VFB = 0 V 1.5 mA IEAOM Output sink current VFB = 1 V 1.5 mA POWER GOOD Feedback upper voltage limit for VOV 655 675 700 mV PGOOD Feedback lower voltage limit for VUV 500 525 550 mV PGOOD VPGD-HYST PGOOD hysteresis voltage at FB 30 45 mV RPGD PGOOD pull down resistance VFB = 0 V, IFB = 5 mA 30 70 Ω 550 mV < VFB < 655 mV, IPGDLK PGOOD leakage current 10 20 µA VPGOOD = 5 V OUTPUT STAGE RHI High-side device resistance TJ = 25°C, (VBOOT– VSW) = 5.5 V 4.5 6.5 m Ω RLO Low side device resistance TJ = 25°C 1.9 2.7 m Ω OVERCURRENT PROTECTION (OCP) Minimum pulse time during short tPSSC(min) (1) 250 circuit ns Switch leading-edge blanking pulse tBLNKH (1) 150 time (high-side detection) IOCH OC threshold for high-side FET TJ = 25°C, (VBOOT– VSW) = 5.5 V 45 54 65 A IILIM ILIM current source TJ = 25°C 10.0 µA Programmable OC range for low VOCLPRO (1) TJ = 25°C 12 100 mV side FET tOFF OC retry cycles on EN/SS pin 4 Cycle BOOT DIODE VDFWD Bootstrap diode forward voltage IBOOT = 5 mA 0.8 V THERMAL SHUTDOWN TJSD (1) Junction shutdown temperature 145 ºC TJSDH (1) Hysteresis 20 ºC 6 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TPS56221 |
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