SIJ478DP datasheet(3/10 Pages) TFUNK

Part #	SIJ478DP

Description	N-Channel 80 V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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SiJ478DP

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Vishay Siliconix

S13-1386-Rev. A, 17-Jun-13

3

Document Number: 62868

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

20

40

60

80

100

0.0

1.0

2.0

3.0

4.0

5.0

V

DS - Drain-to-Source Voltage (V)

V

GS = 3 V

V

GS = 2 V

V

GS = 10 V thru 5 V

V

GS = 4 V

0.0050

0.0070

0.0090

0.0110

0.0130

0.0150

0

20

40

60

80

100

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 6.0 V

V

GS = 10 V

0

2

4

6

8

10

0

8

16

24

32

40

Q

g - Total Gate Charge (nC)

V

DS = 40 V

V

DS = 60 V

V

DS = 20 V

I

D = 10 A

0

20

40

60

80

100

120

0.0

1.4

2.8

4.2

5.6

7.0

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

0

700

1400

2100

2800

3500

0

12

24

36

48

60

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 20 A

V

GS = 10 V

V

GS = 4.5 V

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