NCP81253MNTBG datasheet(3/10 Pages) ONSEMI

Part #	NCP81253MNTBG

Description	5 V MOSFET Driver Compatible

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP81253

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Table 2. ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Min

Max

Main Supply Voltage (Note 1)

VCC

−0.3 V

6.5 V

Bootstrap Supply Voltage

BST

−0.3 V wrt/SW

35 V wrt/GND

40 V (

v 50 ns) wrt/GND

6.5 V wrt/SW

Switch Node Voltage

SW

−5 V

−10 V (

v 200 ns)

35 V

40 V (

v 50 ns)

High−Side Driver Output

DRVH

−0.3 V wrt/SW

−2 V (

v 200 ns) wrt/SW

BST + 0.3 V wrt/SW

Low−Side Driver Output

DRVL

−0.3 V

−5 V (

v 200 ns)

VCC + 0.3 V

DRVH/DRVL Control Input, Enable Pin

PWM, EN

−0.3 V

6.5 V

Ground

GND

0 V

Storage Temperature Range

TSTG

−55

°C

150

°C

Operating Junction Temperature Range

TJ

−40

°C

150

°C

Moisture Sensitivity Level

MSL

1

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.

Table 3. THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Thermal Characteristics, DFN8, 2x2 mm (Note 2)

Thermal Resistance, Junction−to−Air

RqJA

119

°C/W

2. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate.

Table 4. OPERATING RANGES (Note 3)

Rating

Symbol

Min

Max

Unit

Input Voltage

VCC

4.5

5.5

V

Ambient Temperature

TA

−40

100

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

3. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.

Table 5. ELECTRICAL CHARACTERISTICS VCC = 4.5 V to 5.5 V, VBST−SWN = 4.5 V to 5.5 V, BST = 4.5 V to 30 V, SW = 0 V to

21 V; for typical values TA = 25°C, for min/max values TA = −40°C to 100°C; unless otherwise noted. (Notes 4, 5)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

SUPPLY VOLTAGE

VCC Operation Voltage

VCC

4.5

5.5

V

UNDERVOLTAGE LOCKOUT

VCC Start Threshold

VCC rising

VUVLO

3.8

4.35

4.5

V

VCC UVLO Hysteresis

VUVLO_HYS

150

200

250

mV

SUPPLY CURRENT

Shutdown Mode

ICC + IBST, EN = GND

Ishutdown

1

20

mA

Normal Mode

ICC + IBST, EN = 5 V, PWM = 400 kHz

No load on driver outputs.

Inormal

1.6

mA

Standby Current 1

ICC + IBST, EN = 5 V, PWM = 0 V

Istandby

0.9

mA

4. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.

5. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Low

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

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