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NCP81253MNTBG Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP81253MNTBG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 10 page NCP81253 www.onsemi.com 4 Table 5. ELECTRICAL CHARACTERISTICS VCC = 4.5 V to 5.5 V, VBST−SWN = 4.5 V to 5.5 V, BST = 4.5 V to 30 V, SW = 0 V to 21 V; for typical values TA = 25°C, for min/max values TA = −40°C to 100°C; unless otherwise noted. (Notes 4, 5) Parameter Unit Max Typ Min Symbol Test Conditions BOOTSTRAP DIODE Forward Voltage VCC = 5 V, Forward bias current = 2 mA 0.1 0.4 0.6 V PWM INPUT PWM Input High PWMHI 3.4 V PWM Mid−State PWMMID 1.3 2.7 V PWM Input Low PWMLO 0.7 V HIGH−SIDE DRIVER Output Impedance, Sourcing Current VBST – VSW = 5 V 0.9 1.7 W Output Impedance, Sinking Current VBST – VSW = 5 V 0.7 1.7 W DRVH Rise Time VCC = 5 V, Cload = 3 nF, VBST−VSW = 5 V, DRVH−SW = 90% to 10% trDRVH 16 25 ns DRVH Fall Time VCC = 5 V, Cload = 3 nF , VBST−VSW = 5 V, DRVH−SW = 90% to 10% tfDRVH 11 18 ns DRVH Turn−Off Propagation Delay Cload = 3 nF, PWM = PWMLO to DRVH = 90% tpdlDRVH 10 18 30 ns DRVH Turn−On Propagation Delay Cload = 3 nF, DRVL = 1 V to DRVH−SW = 10% tpdhDRVH 10 15 40 ns SW Pull−down Resistance SW to GND 45 k W DRVH Pull−down Resistance DRVH to SW 45 k W LOW−SIDE DRIVER Output Impedance, Sourcing Current VCC = 5 V 0.9 1.7 W Output Impedance, Sinking Current VCC = 5 V 0.4 0.8 W DRVL Rise Time VCC = 5 V, Cload = 3 nF, VBST−VSW = 5 V, DRVL = 90% to 10% trDRVL 11 25 ns DRVL Fall Time VCC = 5 V, Cload = 3 nF , VBST−VSW = 5 V, DRVL = 90% to 10% tfDRVL 8 15 ns DRVL Turn−Off Propagation Delay Cload = 3 nF, PWM = PWMHI to DRVL = 90% tpdlDRVL 10 15 30 ns DRVL Turn−On Propagation Delay Cload = 3 nF, DRVH−SW = 1 V to DRVL = 10% tpdhDRVL 5 8 25 ns DRVL Pull−down Resistance DRVL to GND, VCC = GND 45 k W EN INPUT Enable Voltage High ENHI 3.3 V Enable Voltage Mid ENMID 1.35 1.8 V Enable Voltage Low ENLO 0.6 V Input Bias Current −1.0 1.0 mA EN High Propagation Delay Time PWM = 0 V, EN going from 0 V to ENHI to DRVL rising to 10% tpdEN_HI 20 40 ns SWITCH NODE SW Node Leakage Current 20 mA 4. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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