VS-FA72SA50LC

www.vishay.com

Vishay Semiconductors

Revision: 13-Aug-13

1

Document Number: 94782

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET, 72 A

FEATURES

• Fully isolated package

• Easy to use and parallel

• Low on-resistance

• Dynamic dV/dt rating

• Fully avalanche rated

• Simple drive requirements

• Low gate charge device

• Low drain to case capacitance

• Low internal inductance

• UL approved file E78996

• Designed for industrial level

• Material categorization: For definitions of compliance



DESCRIPTION

Third

Generation

Power

MOSFETs

from

Vishay

Semiconductors provide the designer with the best

combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The SOT-227 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 600 W to 1000 W. The low thermal

resistance

of the SOT-227 contribute to its wide

acceptance throughout the industry.



Notes

PRODUCT SUMMARY

500 V

61.5 m



72 A

Type

Modules - MOSFET

Package

SOT-227

SOT-227

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

72

A

52

Pulsed drain current

228

Power dissipation

1136

W

545

Gate to source voltage

± 20

V

Single pulse avalanche energy

725

mJ

Repetitive avalanche current

22

A

Repetitive avalanche energy

120

mJ

Peak diode recovery dV/dt

10

V/ns

Operating junction and storage temperature range

- 55 to + 150

°C

Insulation withstand voltage (AC-RMS)

2.5

kV

Mounting torque

M4 screw, on terminals and heatsink

1.3

Nm