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MSAFX20N60A Datasheet(PDF) 1 Page - Microsemi Corporation |
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MSAFX20N60A Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  MSAFX20N60A 600 Volts 20 Amps 350 m Ω Ω Features • Ultrafast body diode • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request DESCRIPTION SYMBOL MAX. UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C BVDSS 600 Volts Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ BVDGR 600 Volts Continuous Gate-to-Source Voltage VGS +/-20 Volts Transient Gate-to-Source Voltage VGSM +/-30 Volts Continuous Drain Current Tj= 25 °C Tj= 100 °C ID25 ID100 20 15 Amps Peak Drain Current, pulse width limited by TJmax IDM 80 Amps Repetitive Avalanche Current IAR 20 Amps Repetitive Avalanche Energy EAR 30 mJ Single Pulse Avalanche Energy EAS tbd mJ Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C dv/dt 5.0 V/ns Power Dissipation PD 300 Watts Junction Temperature Range Tj -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Continuous Source Current (Body Diode) IS 20 Amps Pulse Source Current (Body Diode) ISM 80 Amps Thermal Resistance, Junction to Case θ JC 0.25 °C/W Maximum Ratings @ 25 °°C (unless otherwise specified) Mechanical Outline Datasheet# MSC0303A 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 N-CHANNEL ENHANCEMENT MODE POWER MOSFET DRAIN SOURCE GATE |
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Similar Description - MSAFX20N60A |
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