V35DM120-M3, V35DM120HM3

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Vishay General Semiconductor

Revision: 05-Mar-15

1

Document Number: 87603

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology generation 2

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available



- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, inductrial, and

automotive application.

MECHANICAL DATA

Case: TO-263AC (SMPD)



Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant



Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

AEC-Q101 qualified

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: As marked

Notes

PRIMARY CHARACTERISTICS

35 A

120 V

320 A

0.73 V

175 °C

Package

TO-263AC (SMPD)

Diode variations

Single die

V35DM120

Top View

Bottom View

PIN 1

K

HEATSINK

PIN 2

K

1

2

TMBS

TO-263AC (SMPD)

PARAMETER

SYMBOL

V35DM120

UNIT

Maximum repetitive peak reverse voltage

120

V

Maximum average forward rectified current (fig. 1)

35

A

6.3

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

320

A

Operating junction and storage temperature range

-40 to +175

°C