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PPNHZ52F120A Datasheet(PDF) 1 Page - Microsemi Corporation

Part # PPNHZ52F120A
Description  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

PPNHZ52F120A Datasheet(HTML) 1 Page - Microsemi Corporation

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Datasheet# MSC1376.PDF
PPNGZ52F120A
PPNHZ52F120A
PPC INC.
1200 Volts
52 Amps
3.2 Volts vce(sat)
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed package
• Low package inductance
Very low thermal resistance
Reverse polarity available upon request: PPNH(G)Z52F120B
high frequency IGBT, low switching losses
anti-parallel FREDiode (PPNHZ52F120A only)
DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
BVCES
1200
Volts
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
BVCGR
1200
Volts
Continuous Gate-to-Emitter Voltage
VGES
+/-20
Volts
Transient Gate-to-Emitter Voltage
VGEM
+/-30
Volts
Continuous Collector Current
Tj= 25
°C
Tj= 90
°C
IC25
IC90
52
33
Amps
Peak Collector Current (pulse width limited by Tjmax,)
Tj= 25
°C
Tj= 90
°C
ICM(25)
ICM(90)
104
66
Amps
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH,
RG= 25Ω, Tj= 25°C
EAS
65
mJ
Short circuit current (SOA) , VCE≤ 1200V, TJ= 150°C, tsc≤ 10µs
IC(sc)
260
A
Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C
IC(sc)RBSOA
66
A
Power Dissipation
PD
300
Watts
Junction Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Continuous Source Current (Body Diode, PPNHZ52F120A only)
IS
50
Amps
Pulse Source Current (Body Diode, PPNHZ52F120A only)
ISM
100
Amps
Thermal Resistance, Junction to Case
θ
JC
0.42
°C/W
Maximum Ratings @ 25
°°C (unless otherwise specified)
7516 Central Industrial Drive
Riviera Beach, FL 33404
PH: 561-842-0305
Fax: 561-845-7813
N-CHANNEL
INSULATED GATE BIPOLAR
TRANSISTOR
TO-258


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