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VB60170G-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VB60170G-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page VB60170G-E3 www.vishay.com Vishay General Semiconductor Revision: 11-Sep-13 1 Document Number: 89950 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 170 V IFSM 210 A VF at IF = 30 A 0.72 V TJ max. 175 °C Package TO-263AB Diode variations Common cathode TO-263AB 1 2 K PIN 1 PIN 2 K HEATSINK VB60170G TMBS ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VB60170G UNIT Maximum repetitive peak reverse voltage VRRM 170 V Maximum average forward rectified current (fig. 1) per device IF(AV) 60 A per diode 30 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 210 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG -40 to +175 °C |
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Similar Description - VB60170G-E3_15 |
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