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CS299H Datasheet(PDF) 2 Page - ON Semiconductor |
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CS299H Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page CS299 http://onsemi.com 2 MAXIMUM RATINGS* Rating Value Unit Storage Temperature Range, TS –65 to +150 °C Ambient Operating Temperature –40 to 140 °C Collector Breakdown Voltage 80 V *The maximum package power dissipation must be observed. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Supply Requirements Saturation Voltage IB1 = 0.6 mA, IC2 = 350 mA TJ = –30°C TJ = 150°C – – – – – – 0.60 0.55 0.65 V V V Collector Breakdown Voltage IC1 = IC2 = 1.0 mA, RBE = 200, VC1 = VC2 80 – – V Collector Cut Off Current (ICEO) VCE1 = VCE2 = 60 V, RBE = 200 – – 10 µA DC Current Gain (HFE) VC1 =VC2 = 1.0 V, IB1 = 100 µA 1000 – – (IC1 + IC2)/IB1 NPN β (Q1) IB1 = 1.0 µA, VCE2 = 0 V, VCE1 = 1.5 V 50 – – IC1/IB1 VBE (in saturation) IB1 = 0.6 mA, IC1 = 50 mA, IC2 = 350 mA – – 2.0 V Diode Forward Voltage (D1) ID1 = 25 mA 0.5 – 1.5 V PACKAGE PIN DESCRIPTION PIN SYMBOL FUNCTION PIN SYMBOL FUNCTION B Base of input darlington. C1 Collector of darlington input device. C2 Collector of darlington output driver. GND Ground. Emitter of dartlington driver. Base/Emitter resistor and substrate are also connected here. |
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