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NCS199A1SQT2G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCS199A1SQT2G
Description  Bi-Directional Zero-Drift
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCS199A1SQT2G Datasheet(HTML) 3 Page - ON Semiconductor

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NCS199A1, NCS199A2, NCS199A3
www.onsemi.com
3
Table 4. ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C, guaranteed by characterization and/or design.
At TA = +25°C, VSENSE = VIN+ − VIN−, and VREF = VS/2, unless otherwise noted.
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
GAIN
NCS199A1
NCS199A2
NCS199A3
G
50
100
200
V/V
Gain Error
VSENSE = −5 mV to 5 mV
Ge
+0.2
+1.5
%
Gain Error vs. Temperature
TA = −10°C to 125°C
7
20
ppm/
°C
Nonlinearity Error
VSENSE = −5 mV to 5 mV
±0.01
%
Maximum Capacitive Load
No sustained oscillation
1
nF
VOLTAGE OFFSET
Offset Voltage (RTI Note 6)
VSENSE = 0 mV
VOS
±5.0
±150
mV
Offset Drift
NCS199A2, NCS199A3
NCS199A1
dV/dT
0.1
0.5
0.6
2.0
mV/°C
INPUT
Input Bias Current
VSENSE = 0 mV
IIB
60
mA
Common−Mode Input Voltage Range
VCM
−0.3
26
V
Common−Mode
Rejection Ratio
NCS199A2,
NCS199A3
VS = 5 V, VIN+ = 2 V to +26 V,
VSENSE = 0 mV
CMRR
100
115
dB
VS = 3.3 V, VIN+ = 3 V to +26 V,
VSENSE = 0 mV
100
115
dB
VS = 3.3 V, VIN+ = 0 V to +26 V,
VSENSE = 0 mV (TA = −10°C to 85°C)
100
120
dB
Common−Mode
Rejection Ratio
NCS199A1
VS = 5 V, VIN+ = 2 V to +26 V,
VSENSE = 0 mV
CMRR
97
110
dB
VS = 3.3 V, VIN+ = 3 V to +26 V,
VSENSE = 0 mV
97
110
dB
VS = 3.3 V, VIN+ = 0 V to +26 V,
VSENSE = 0 mV (TA = −10°C to 85°C)
97
115
dB
OUTPUT
Output Voltage Low
Referenced from GND
RL = 10 kΩ to Ground
VOL
5
50
mV
Output Voltage High
Referenced from VS
RL = 10 kΩ to Ground
VOH
0.05
0.2
V
DYNAMIC PERFORMANCE
Bandwidth (f−3dB)
CLOAD = 10 pF, NCS199A1
CLOAD = 10 pF, NCS199A2
CLOAD = 10 pF, NCS199A3
BW
100
60
40
kHz
Slew Rate
SR
0.4
V/
ms
NOISE
Spectral Density, 1 kHz (RTI Note 6)
en
35
nV/ Hz
POWER SUPPLY
Operating Voltage Range
VSENSE = 0 mV
Vs
2.7
26
V
Quiescent Current
VSENSE = 0 mV
IDD
65
100
mA
Quiescent Current over Temperature
VSENSE = 0 mV
115
mA
Power Supply Rejection Ratio
VS = +2.7 V to +26 V, VIN+ =18 V,
VSENSE = 0 mV
PSRR
±0.1
±10
mV/V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. RTI = referenced−to−input.


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