VE2045C-E3_15 datasheet(2/4 Pages) VISHAY

Part #	VE2045C-E3

Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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VE2045C-E3

www.vishay.com

Vishay General Semiconductor

Revision: 20-Dec-13

2

Document Number: 89980

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) The heat generated must be less than the thermal conductivity from junction-to-ambient:

P

D/TJ < 1 R

JA

(2) Free air, without heatsink



RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VE2045C-E3

UNIT

Typical thermal resistance

per diode

RJC

3.5

°C/W

per device

2.2

per device

RJA (1)(2)

55

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

VE2045C-E3/45

1.93

45

50/tube

Tube

0

2

4

6

8

10

12

14

16

18

20

22

0

25

50

75

100

125

150

Case Temperature (°C)

RθJA = RθJC = 2.2 oC/W

TA = 25 oC,

RθJA = 55 oC/W

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

9

10 11 12

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 1.0

D = 0.8

D = tp/T

T

tp

0.1

1

10

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Instantaneous Forward Voltage (V)

T

A = 150 °C

T

A = 25 °C

T

A = 100 °C

T

A = 125 °C

0.001

0.01

0.1

1

10

100

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

T

A = 150 °C

T

A = 125 °C

T

A = 100 °C

T

A = 25 °C

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