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NCS2302 Datasheet(PDF) 5 Page - ON Semiconductor |
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NCS2302 Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 8 page NCS2302 http://onsemi.com 5 Table 5. ELECTRICAL CHARACTERISTICS Typical values are referenced to TA = 25°C, VDD = 1.8 V, VDD2 = 2.1 V, unless otherwise noted. Min/max values apply from TA = −40°C to 85°C, unless otherwise noted. (Notes 5, 6) Parameter Units Max Typ Min Symbol Test Conditions OUTPUT CHARACTERISTICS OF DET Voltage Output Low IOH = 0.1 mA VOL 0.1 V Voltage Output High IOH = −0.1 mA VOH 1.6 V Rise Time COUT = 15 pF, RL = 1 MW trise 50 ns Fall Time COUT = 15 pF, RL = 1 MW tfall 28 ns INPUT CHARACTERISTICS OF S/E_REF AND S/E_DET Propagation Delay to S/E Cout = 15 pF, VCM = mid−supply, 100 mV overdrive tpLH, tpHL 50 ns Input Leakage VCM = 0.9 V IIL 150 pA Input Capacitance S/E_DET, f = 1 MHz CIN 3 pF S/E_REF, f = 1 MHz 11 OUTPUT CHARACTERISTICS OF S/E Voltage Output Low IOH = 0.1 mA VOL 0.1 V Voltage Output High IOH = −0.1 mA VOH 1.9 V Rise Time COUT = 15 pF, RL = 1 MW trise 30 ns Fall Time COUT = 15 pF, RL = 1 MW tfall 18 ns CHARACTERISTICS OF MIC Drain−Source On Resistance of NMOS IMIC = 1 mA RDS(ON) 0.45 1.2 W 5. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 6. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS Figure 3. MIC On Resistance vs. Drain Current at VDD = 1.6 V Figure 4. MIC On Resistance vs. Drain Current at VDD = 1.8 V MIC DRAIN CURRENT (mA) MIC DRAIN CURRENT (mA) 4.5 4.0 3.5 3.0 2.0 1.5 1.0 0.5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5.0 4.0 3.5 3.0 2.0 1.5 1.0 0.5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2.5 5.0 VDD = 1.6 V T = −40 °C T = 25 °C T = 85 °C VDD = 1.8 V T = −40 °C T = 25 °C T = 85 °C 2.5 4.5 |
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