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NCS2302 Datasheet(PDF) 4 Page - ON Semiconductor |
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NCS2302 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 8 page NCS2302 http://onsemi.com 4 Table 4. RECOMMENDED OPERATING RANGES Rating Conditions Symbol Min Typ Max Unit Power Supply Voltage Headset Detection Circuit VDD 1.6 1.8 2.5 V S/E Detection Comparator VDD2 1.6 2.8 V Input Voltage L_DET, GND_DET VIN 0 VDD V S/E_DET, S/E_REF 0 VDD2 V Input Transition Rise or Fall Rate GND_DET pin Dt / DV 0 10 ns/V MIC Bias Voltage VMIC 0 2.95 V Ambient Temperature TA −40 85 °C Junction Temperature TJ −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 5. ELECTRICAL CHARACTERISTICS Typical values are referenced to TA = 25°C, VDD = 1.8 V, VDD2 = 2.1 V, unless otherwise noted. Min/max values apply from TA = −40°C to 85°C, unless otherwise noted. (Notes 5, 6) Parameter Test Conditions Symbol Min Typ Max Units SUPPLY CHARACTERISTICS Quiescent Supply Current Headset Detection Circuit, VGND_DET = 1.8 V, VL_DET = 1.8 V IDD 7 8.5 mA S/E Detection Comparator, VSE_REF = 0 V, VSE_DET = 2.1 V IDD2 10 12.5 mA INPUT CHARACTERISTICS OF L_DET Voltage Input Low VIL 1.33 V Voltage Input High VIH 1.5 V Propagation Delay to DET Cout = 15 pF, GND_DET = 0 V, L_DET = 1.31 V to 1.52 V tpLH, tpHL 45 ns Low to High Propagation Delay to MIC Cout = 15 pF, GND_DET = 0 V, L_DET = 1.31 V to 1.52 V, RPU = 2.2 kW, MIC bias = 2.3 V tpLH 230 ns High to Low Propagation Delay to MIC Cout = 15 pF, GND_DET = 0 V, L_DET = 1.31 V to 1.52 V, RPU = 2.2 kW, MIC bias = 2.3 V tpHL 30 ns Low Voltage Input Bias Current VL_DET = 0 V IIL 1.8 mA High Voltage Input Leakage VL_DET = 1.8 V IIH 2.4 nA Input Capacitance f = 1 MHz CIN 3 pF INPUT CHARACTERISTICS OF GND_DET Voltage Input Low VIL 0.63 V Voltage Input High VIH 1.17 V Low to High Propagation Delay to DET Cout = 15 pF, RL = 1 MW, L_detect = 0 V, GND_detect = 1.8 to 0 V tpLH 30 ns High to Low Propagation Delay to DET Cout = 15 pF, RL = 1 MW, L_detect = 0 V, GND_detect = 0 to 1.8 V tpHL 16 ns Low Voltage Input Bias Current VGND_detect = 0 V IIL 1.8 mA High Voltage Input Leakage VGND_detect = 1.8 V IIH 2.7 nA Input Capacitance f = 1 MHz CIN 3 pF 5. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 6. Performance guaranteed over the indicated operating temperature range by design and/or characterization. |
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